Diagram Diagosis

This is a design circuit for high power boost converter circuit. This circuit is control by LM25037 Single chip IC. This circuit is a simple straightforward approach that can provide benefits over using a typical single gate-drive controller. This is the figure of the circuit;

The benefits can include higher step-up ratios and lower FET losses due to the reduction in transitional losses. Although there are a number of possible approaches to reduce total FET losses in higher-power boost converters, the equations in this article can be used to calculate total losses in the boost FETs for a number of different approaches. Considering the 150W boost converter example, it has been shown that total losses in the FETs are reduced when comparing the LM25037 dual-output gate-drive controller with the LM5020 single-output gate-drive controller.

[Schematic diagram source: National Semiconductor Notes]